GB/T 1557-2006
The method of determining interstitial oxygen content in silicon by infrared absorption (English Version)

Standard No.

GB/T 1557-2006

Language

Chinese, Available in English version

Release Date

2006

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2019-06

Replace By

GB/T 1557-2018

Latest

GB/T 1557-2018

Replace

GB/T 1557-1989 GB/T 14143-1993

Scope

This standard specifies the method for the determination of interstitial oxygen content in silicon single crystals by infrared spectroscopy. This standard applies to the measurement of interstitial oxygen content in n-type silicon single crystals with room temperature resistivity greater than 0.1Ω•cm and p-type silicon single crystals with room temperature resistivity greater than 0.5Ω•cm. The effective range of this standard for measuring oxygen content is from 1×10¹⁶at·cm^-3 to the maximum solid solubility of interstitial oxygen in silicon.

GB/T 1557-2006 Referenced Document

• ASTM E131 Standard Definitions of Terms and Symbols Relating to Molecular Spectroscopy
• GB/T 14264 Semiconductor materials-Terms and definitions *， 2009-10-30 Update

GB/T 1557-2006 history

• 2018 GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
• 2006 GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
• 1989 GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption

GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption has been changed from GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer.