This standard specifies the measurement method for radial variation of interstitial oxygen content in silicon crystals. This standard is applicable to the measurement of the radial variation of interstitial oxygen content in silicon crystals with room temperature resistivity greater than 0.1Ω·cm. The measurement range is from 3.5×1015at·cm3 to the maximum solid solubility of interstitial oxygen in silicon.
GB/T 14144-1993 history
2009GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
1993GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon