This standard specifies the non-contact measurement method for the warpage of silicon single crystal cutting wafers, grinding wafers and polishing wafers (hereinafter referred to as silicon wafers). This standard is suitable for measuring the warpage of circular silicon wafers with a diameter greater than 50mm and a thickness of 150-1000μm. This standard is also suitable for measuring the warpage of other semiconductor wafers.
GB/T 6620-1995 history
2009GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
1995GB/T 6620-1995 Test method for measuring warp on silicon slices by nontact scanning