IEC 60749-6:2002
Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

Standard No.

IEC 60749-6:2002

Release Date

2002

Published By

International Electrotechnical Commission (IEC)

Status

Be replaced

Replace By

IEC 60749-6:2002/COR1:2003

Latest

IEC 60749-6:2017

Replace

IEC 47/1603/FDIS:2002 IEC 60749:1996 IEC 60749 AMD 1:2000 IEC 60749 AMD 2:2001 IEC 60749 Edition 2.2:2002 IEC/PAS 62205:2000

Scope

The purpose of this part of IEC 60749 is to test and determine the effect on all semiconductor electronic devices of storage at elevated temperature without electrical stress applied. This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. In general, this test of storage at high temperature is in conformity with IEC 60068-2-48 but, due to specific requirements of semiconductors, the clauses of this standard apply.

IEC 60749-6:2002 history

• 2017 IEC 60749-6:2017 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
• 2003 IEC 60749-6:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature
• 2002 IEC 60749-6:2002 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature

IEC 60749-6:2002 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature has been changed from IEC 60749:1996 Semiconductor devices - Mechanical and climatic test methods.