This standard specifies the method summary and principle, reagents and materials, instruments and equipment, samples, analysis steps, expression of analysis results and tolerances for the determination of free silicon by gas volumetric method. This standard applies to the determination of the amount of free silicon in silicon carbide refractories. Measuring range: free silicon 0.10% ~ 3.00%.
GB/T 16555.3-1996 history
2017GB/T 16555-2017 Chemical analysis of refractories containing carbon and silicon carbide or nitride
2008GB/T 16555-2008 Chemical analysis of refractories containing carbon and silicon carbide or nitride
1996GB/T 16555.3-1996 Chemical analysis for silicon carbide refractories--determination of free silicon--Gas volumetric method
GB/T 16555.3-1996 Chemical analysis for silicon carbide refractories--determination of free silicon--Gas volumetric method was changed to GB/T 16555-2008 Chemical analysis of refractories containing carbon and silicon carbide or nitride .