GB/T 39145-2020 (English Version) PDF

Scope: This standard specifies a method for determining the content of metal elements on the surface of silicon wafers by inductively coupled plasma mass spectrometry. This standard is applicable to the determination of trace metal elements such as sodium, magnesium, aluminum, potassium, calcium, chromium, manganese, iron, cobalt, brocade, copper and zinc on the surface of silicon single polished wafers and silicon epitaxial wafers. The measurement range is 10 cm - 10 cm". This standard is also applicable to the determination of trace metal element content on the surface of unpatterned silicon wafers such as silicon annealed wafers and silicon diffusion wafers. Note: The metal element content on the surface of silicon wafers is measured in atoms per square centimeter.

GB/T 39145-2020 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 17433 Foundation terms for chemical analysis of metallurgical products
GB/T 19921 Test method for particles on polished silicon wafer surfaces
GB/T 25915.1 Cleanrooms and associated controlled environments—Part 1: Classification of air cleanliness by particle concentration*， 2021-08-20 Update
GB/T 37837 General rules for quadrupole inductively coupled plasma mass spectrometry
GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
JJF 1159 Calibration Specification for Quadrupole Inductively Coupled Plasma Mass Spectrometers

2020 GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry