This part specifies the measurement principle diagram, measurement steps and specified conditions for the photoelectric conversion efficiency of semiconductor infrared emitting diodes (hereinafter referred to as devices). This section applies to semiconductor infrared emitting diodes.
SJ/T 2658.16-2016 Referenced Document
SJ/T 2658.1 Measuring method for semiconductor infrared-emitting diode.Part 1: General
SJ/T 2658.6 Measuring method for semiconductor infrared-emitting diode.Part 6: Radiant power