BS EN 15991:2015
Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

Standard No.
BS EN 15991:2015
Release Date
2015
Published By
British Standards Institution (BSI)
Latest
BS EN 15991:2015
Replace
BS EN 15991:2011

BS EN 15991:2015 Referenced Document

  • EN ISO 21068-1:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 1: General information and sample preparation (ISO 21068-1:2008)
  • ISO 21068-1:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 1: General information and sample preparation
  • ISO 5022:1979 Shaped refractory products; Sampling and acceptance testing
  • ISO 5725-2:1994 Accuracy (trueness and precision) of measurement methods and results - Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method
  • ISO 5725-4:1994 Accuracy (trueness and precision) of measurement methods and results - Part 4: Basic methods for the determination of the trueness of a standard measurement method
  • ISO 8656-1:1988 Refractory products; sampling of raw materials and unshaped products; part 1: sampling scheme
  • ISO/IEC Guide 98-3 Uncertainty of measurement - Guide to the expression of uncertainty in measurement (GUM:1995). Extension to any number of output quantities

BS EN 15991:2015 history

  • 2015 BS EN 15991:2015 Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
  • 2011 BS EN 15991:2011 Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
Testing of ceramic and basic materials. Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)



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