GB/T 17170-2015
Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy (English Version)
- Standard No.
- GB/T 17170-2015
- Language
- Chinese, Available in English version
- Release Date
- 2015
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 17170-2015
- Replace
- GB/T 17170-1997
- Scope
- This standard specifies the infrared absorption test method for deep donor EL2 concentration in semi-insulating gallium arsenide single crystal. This standard applies to the determination of the concentration of deep donor EL2 in non-doped and carbon-doped semi-insulating gallium arsenide single crystals with a resistivity greater than 106 Ω·cm. This standard does not apply to the determination of EL2 concentration of chromium-doped semi-insulating gallium arsenide single crystal deep donor.
GB/T 17170-2015 Referenced Document
- GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 17170-2015 history
- 2015 GB/T 17170-2015 Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
- 1997 GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
