GB/T 17170-1997
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method (English Version)
- Standard No.
- GB/T 17170-1997
- Language
- Chinese, Available in English version
- Release Date
- 1997
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2016-07
- Replace By
- GB/T 17170-2015
- Latest
- GB/T 17170-2015
- Scope
- This standard specifies the infrared absorption test method for non-doped semi-insulating gallium arsenide single crystal and its wafer deep level EL2 concentration. This standard is applicable to the determination of the EL2 concentration of the non-doped semi-insulating gallium arsenide single crystal and its wafer deep level with a resistivity greater than 107Ω·cm. This standard does not apply to the determination of EL2 concentration at deep level of chromium-doped semi-insulating gallium arsenide samples.
GB/T 17170-1997 history
- 2015 GB/T 17170-2015 Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
- 1997 GB/T 17170-1997 Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
