- Standard No.
- SJ/T 2658.9-2015
- Language
- Chinese, Available in English version
- Release Date
- 2015
- Published By
- Professional Standard - Electron
- Latest
-
SJ/T 2658.9-2015
- Replace
-
SJ 2658.9-1986
- Scope
- This part specifies the measurement principle diagram, measurement steps and specified conditions for the spatial distribution and half-intensity angle of radiation intensity of semiconductor infrared emitting diodes (hereinafter referred to as devices). This section applies to semiconductor infrared emitting diodes.
SJ/T 2658.9-2015 Referenced Document
- CIE 127-1997 Measurement of LEDs
- GB/T 15651-1995 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic devices
- GB/T 2900.65-2004 Electrotechnical terminology-Lighting
- SJ/T 2658.1 Measuring method for semiconductor infrared-emitting diode.Part 1: General
- SJ/T 2658.8 Measuring method for semiconductor infrared-emitting diode.Part 8: Radiant intensity
SJ/T 2658.9-2015 history
- 2015 SJ/T 2658.9-2015 Measuring method for semiconductor infrared-emitting diode.Part 9: Spatial distribution of radiant intensity and half-intensity angle
- 1970 SJ 2658.9-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation
SJ/T 2658.9-2015 Measuring method for semiconductor infrared-emitting diode.Part 9: Spatial distribution of radiant intensity and half-intensity angle has been changed from SJ 2658.9-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation.