GB/T 14143-1993
Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer (English Version)

Standard No.

GB/T 14143-1993

Language

Chinese, Available in English version

Release Date

1993

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2006-11

Replace By

GB/T 1557-2006

Latest

GB/T 1557-2018

Scope

This standard specifies the method for measuring the oxygen content in the interstitial space of silicon wafers with a thickness of 300-900 μm by infrared absorption method. This standard is applicable to the measurement of the oxygen content in the gap between silicon wafers with room temperature resistivity greater than 0.1Ω·cm. The measurement range is from 3×10¹⁶atcm^-3 to the maximum solid solubility of interstitial oxygen in silicon.

GB/T 14143-1993 history

• 2018 GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
• 2006 GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
• 1993 GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer

GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer was changed to GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption.