GB/T 29850-2013
Test method for measuring compensation degree of silicon materials used for photovoltaic applications (English Version)

Standard No.

GB/T 29850-2013

Language

Chinese, Available in English version

Release Date

2013

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 29850-2013

Scope

This standard specifies the measurement and analysis methods for the compensation degree of silicon materials used in photovoltaic cells. This standard applies to the measurement and analysis of the compensation degree of non-doped silicon materials used in photovoltaic cells.

GB/T 29850-2013 Referenced Document

• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method*， 2022-03-09 Update
• GB/T 29057 Practice for evaluating polycrystalline silicon rods by zone fusion pulling and spectroscopic analysis*， 2023-08-06 Update
• GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

GB/T 29850-2013 history

• 2013 GB/T 29850-2013 Test method for measuring compensation degree of silicon materials used for photovoltaic applications