ISO 12406:2010
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
- Standard No.
- ISO 12406:2010
- Release Date
- 2010
- Published By
- International Organization for Standardization (ISO)
- Latest
- ISO 12406:2010
- Scope
- This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
ISO 12406:2010 Referenced Document
- ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
- ISO 18114:2003 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of relative sensitivity factors from ion-implanted reference materials
- ISO 18115-1 Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy*， 2023-06-01 Update
ISO 12406:2010 history
- 2010 ISO 12406:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
