ISO 14237:2010
Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials

Standard No.
ISO 14237:2010
Release Date
2010
Published By
International Organization for Standardization (ISO)
Latest
ISO 14237:2010
Scope
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 × 1016 atoms/cm3 to 1 × 1020 atoms/cm3.

ISO 14237:2010 Referenced Document

  • ISO 17560 Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon*2014-09-10 Update
  • ISO 18114 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of relative sensitivity factors from ion-implanted reference materials*2021-04-30 Update

ISO 14237:2010 history

  • 2010 ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
  • 2000 ISO 14237:2000 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials



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