GB/T 25188-2010
Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy (English Version)
- Standard No.
- GB/T 25188-2010
- Language
- Chinese, Available in English version
- Release Date
- 2010
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 25188-2010
- Scope
- This standard specifies a method for accurately measuring the thickness of an ultra-thin silicon oxide layer on the surface of a silicon wafer, that is, X-ray photoelectron spectroscopy (XPS). This standard is applicable to the accurate measurement of the thickness of the ultra-thin silicon oxide layer prepared on the surface of the silicon wafer by thermal oxidation; usually, the thickness of the silicon oxide layer to which this standard applies is not greater than 6nm.
GB/T 25188-2010 Referenced Document
- GB/T 19500 General rules for X-ray photoelectron spectroscopic analysis method
- GB/T 21006 Surface chemical analysis.X-ray photoelectron and Auger electron spectrometers.Linearity of intensity scale
- GB/T 22461 Surface chemical analysis.Vocabulary
- GB/T 22571 Surface chemical analysis—X-ray photoelectron spectrometers—Calibration of energy scales*， 2017-09-07 Update
GB/T 25188-2010 history
- 2010 GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
