GB/T 4058-1995
Test method for detection of oxidation induced defects in polished silicon wafers (English Version)

Standard No.
GB/T 4058-1995
Language
Chinese, Available in English version
Release Date
1995
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status
 2010-06
Replace By
GB/T 4058-2009
Latest
GB/T 4058-2009
Scope
This standard specifies the inspection method for oxidation-induced defects on silicon polished wafers. This standard applies to the detection of crystal defects induced or enhanced in the surface area of silicon polished wafers during the oxidation process of simulated devices.

GB/T 4058-1995 history

  • 2009 GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
  • 1995 GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers
Test method for detection of oxidation induced defects in polished silicon wafers



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