This standard specifies the inspection method for oxidation-induced defects on silicon polished wafers. This standard applies to the detection of crystal defects induced or enhanced in the surface area of silicon polished wafers during the oxidation process of simulated devices.
GB/T 4058-1995 history
2009GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
1995GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers