GB/T 1555-2009
Testing methods for determining the orientation of a semiconductor single crystal (English Version)

Standard No.

GB/T 1555-2009

Language

Chinese, Available in English version

Release Date

2009

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2024-03

Replace By

GB/T 1555-2023

Latest

GB/T 1555-2023

Replace

GB/T 1555-1997

Scope

This standard specifies the methods for X-ray diffraction orientation and optical pattern orientation of semiconductor single crystals. This standard applies to the determination of the surface orientation of semiconductor single crystal materials approximately parallel to the low-index atomic plane.

GB/T 1555-2009 Referenced Document

• GB/T 14264-2009 Semiconductor materials-Terms and definitions
• GB/T 2481.1-1998 Bonded abrasives--Determination and designation of grain size distribution--Part 1: Macrogrits F4 to F220
• GB/T 2481.2-2009 Bonded abrasives-Determination and designation of grain size distribution-Part2:Microgrits

GB/T 1555-2009 history

• 2023 GB/T 1555-2023 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal
• 2009 GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
• 1997 GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal