IEC 60749-36:2003
Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state
- Standard No.
- IEC 60749-36:2003
- Release Date
- 2003
- Published By
- International Electrotechnical Commission (IEC)
- Latest
- IEC 60749-36:2003
- Replace
- IEC 47/1667/FDIS:2002 IEC 60749:1996 IEC 60749 AMD 2:2001 IEC 60749 Edition 2.2:2002
- Scope
- This part of IEC 60749 provides a test for determining the effects of constant acceleration on cavity-type semiconductor devices. It is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration test. It may be used as a high stress (destructive) test to determine the mechanical limits of the package, internal metallisation and lead system, die or substrate attachment, and other elements of the microelectronic device. When proper stress levels have been established this test method may also be employed as a non-destructive in-line 100 % screen to detect and eliminate devices with lower than normal mechanical strengths in any of the structural elements. In general, this acceleration steady-state test method is in conformity with IEC 60068-2-7 but, due to specific requirements of semiconductors, the clauses of this standard apply.
IEC 60749-36:2003 history
- 2003 IEC 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state
