IEC 60749-2:2002
Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure

Standard No.

IEC 60749-2:2002

Release Date

2002

Published By

International Electrotechnical Commission (IEC)

Status

Be replaced

Replace By

IEC 60749-2:2002/COR1:2003

Latest

IEC 60749-2:2002/COR1:2003

Replace

IEC 47/1601/FDIS:2002 IEC 60749:1996 IEC 60749 AMD 1:2000 IEC 60749 AMD 2:2001 IEC 60749 Edition 2.2:2002

Scope

This section applies to low pressure testing of semiconductor devices. The purpose of this test is to measure the ability of components and materials to avoid electrical breakdown failure, which is caused by the weakening of the dielectric strength of air and other insulating materials when the air pressure is reduced. This test is only applicable to devices with operating voltages exceeding 1 000 V. This test is applicable to all air-sealed semiconductor devices. This tester is suitable for military and space fields. This low pressure test method is generally consistent with IEC 60068-2-13, but in view of the special requirements of semiconductor devices, the provisions of this section are used.

IEC 60749-2:2002 history

• 2003 IEC 60749-2:2002/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure
• 2002 IEC 60749-2:2002 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure

IEC 60749-2:2002 Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure has been changed from IEC 60749:1996 Semiconductor devices - Mechanical and climatic test methods.