Used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward condu
IEC 60749-34:2005 history
2010IEC 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
2005IEC 60749-34:2005 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
2004IEC 60749-34:2004 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling