GB/T 40109-2021
Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon (English Version)
- Standard No.
- GB/T 40109-2021
- Language
- Chinese, Available in English version
- Release Date
- 2021
- Published By
- 国家市场监督管理总局、中国国家标准化管理委员会
- Latest
- GB/T 40109-2021
- Scope
- This document describes methods for the depth profiling of boron in silicon using a magnetic sector or quadrupole secondary ion mass spectrometer, and methods for depth calibration using a stylus surface profiler or an optical interferometer. /cm3 ~ 1×1020 a/cm3 single crystal silicon, polycrystalline silicon or amorphous silicon This document is applicable to silicon samples with a boron atomic concentration range of 1×1016 at oms t oms and a sputtering arc crater depth of 50nm or above.
GB/T 40109-2021 Referenced Document
- ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
GB/T 40109-2021 history
- 2021 GB/T 40109-2021 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon
