T/IAWBS 005-2018 (English Version) PDF

Scope: This standard applies to silicon carbide polishing discs prepared by single- or double-side polishing of 6-inch 4H and 6H silicon carbide single crystal abrasive discs. Specifies the necessary relevant terms, product classification, technical requirements, test methods, detection rules, marking, packaging, transportation, storage, etc. for 6-inch 4H and 6H silicon carbide single crystal polished wafers. This standard stipulates that the crystallographic direction of silicon carbide polished wafers is that the orthogonal crystallographic deviation of the surface orientation of silicon carbide polished wafers is: a) Orthogonal crystallographic direction: 0° ± 0.5°; b) Demicrystalline direction: the crystal orientation of silicon carbide polished wafers The deviation is 4°±0.5° or other angles from the normal line of the wafer surface to the [1120] direction along the main positioning edge. At the same time, this standard also stipulates surface defects, microtubule density, crystal quality, resistivity, polytype, dislocation density, etc.

T/IAWBS 005-2018 history