The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence@ and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
IEC 60749-17:2019 history
2019IEC 60749-17:2019 Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques – Partie 17: Irradiation aux neutrons (Edition 2.0)
2003IEC 60749-17:2003 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation