ASTM F1049-00
Standard Practice for Shallow Etch Pit Detection on Silicon Wafers

Standard No.
ASTM F1049-00
Release Date
2000
Published By
American Society for Testing and Materials (ASTM)
Status
Replace By
ASTM F1049-02
Latest
ASTM F1049-02
Scope

1.1 This practice is used to detect shallow etch pits, which may be related to the level of metallic impurities near the surface of silicon epitaxial or polished wafers.

1.2 This practice is not recommended for use in defect density evaluations, but as a subjective means of estimating defect densities and distributions on the surface of a polished or epitaxial wafer.

1.3 Silicon crystals doped either p- or n-type and with resistivities as low as 0.005 [omega][dot]cm may be evaluated. This practice is applicable for silicon wafers grown in either a (111) or (100) crystal orientation.

1.4 This practice utilizes a thermal oxidation process followed by a chemical preferential etchant to create and then delineate shallow etch pits.

1.5 The values stated in acceptable metric units are to be regarded as the standard. The values in parentheses are for information only.

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

ASTM F1049-00 Referenced Document

  • ASTM D5127 Standard Guide for Ultra Pure Water Used in the Electronics and Semiconductor Industry
  • ASTM F154 
  • ASTM F1725 Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
  • ASTM F1727 Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
  • ASTM F1809 Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
  • ASTM F1810 

ASTM F1049-00 history

Standard Practice for Shallow Etch Pit Detection on Silicon Wafers



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