OVE EN IEC 63275-2:2021
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)

Standard No.

OVE EN IEC 63275-2:2021

Release Date

2021

Published By

AT-OVE/ON

Latest

OVE EN IEC 63275-2:2021

OVE EN IEC 63275-2:2021 history

• 2021 OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)