SJ/T 11552-2015 Test methods for measurement of interstitial oxygen content of silicon wafers by infrared absorption with P-polarized radiation incident at the Brewster angle (English Version)
This standard specifies a method for measuring the interstitial oxygen content in silicon using Brewster's angle incident P-polarized radiation infrared absorption spectrometry. This standard is suitable for testing the interstitial oxygen content in silicon single crystals with a resistivity greater than 5 Ω·cm at room temperature, and is especially suitable for measuring the oxygen content in thin silicon wafer samples. The valid range of oxygen content is from 1 × 10 at·cm to the maximum solid solubility of interstitial oxygen in silicon single crystals.
SJ/T 11552-2015 history
2015SJ/T 11552-2015 Test methods for measurement of interstitial oxygen content of silicon wafers by infrared absorption with P-polarized radiation incident at the Brewster angle