GB/T 31854-2015
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry (English Version)

Standard No.

GB/T 31854-2015

Language

Chinese, Available in English version

Release Date

2015

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 31854-2015

Scope

This standard specifies the method for the determination of trace bulk metal impurities in silicon materials for photovoltaic cells using inductively coupled plasma mass spectrometry (ICP-MS). This standard applies to the determination of trace bulk metal impurities iron, chromium, nickel, copper and zinc in silicon materials for photovoltaic cells. The measuring range of each element is shown in Table 1.

GB/T 31854-2015 Referenced Document

• GB/T 25915.1-2010 Cleanrooms and associated controlled environments.Part 1:Classification of air cleanliness

GB/T 31854-2015 history

• 2015 GB/T 31854-2015 Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry