IEC 62047-16:2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
- Standard No.
- IEC 62047-16:2015
- Release Date
- 2015
- Published By
- International Electrotechnical Commission (IEC)
- Latest
- IEC 62047-16:2015
- Replace
- IEC 47F/209/FDIS:2014
- Scope
- This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0@01 ?? to 10 ?? in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young's modulus and Poisson's ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1. 1 Numbers in square brackets refer to the Bibliography.
IEC 62047-16:2015 Referenced Document
- IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-16:2015 history
- 2015 IEC 62047-16:2015 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
