GB/T 32651-2016 Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry (English Version)
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 32651-2016
Scope
This standard specifies a method for the determination of trace elements in solar-grade silicon by high-quality resolution glow discharge mass spectrometry. This standard applies to the determination of trace elements in solar grade silicon materials, including iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), zinc (Zn), boron (B), phosphorus (P) , calcium (Ca), sodium (Na), magnesium (Mg), aluminum (Al), arsenic (As), scandium (Sc), titanium (Ti), vanadium (V), manganese (Mn), cobalt (Co) , Gallium (Ga) and other elements are measured in the range of 5 μg/kg~50 mg/kg. This method is applicable to the analysis of silicon materials in various physical forms and with any type and concentration of dopants, such as polycrystalline silicon powder, granules, blocks, ingots, sheets and single crystal silicon rods, blocks, sheets, etc.