SJ/T 11490-2015
Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers (English Version)

Standard No.

SJ/T 11490-2015

Language

Chinese, Available in English version

Release Date

2015

Published By

Professional Standard - Electron

Latest

SJ/T 11490-2015

Scope

This standard specifies the measurement method for corrosion pit density (EPD) of low dislocation density gallium arsenide (GaAs) polished wafers. This standard is applicable to the measurement of EPD of circular GaAs wafers with a diameter of 2 inches and 3 inches and an EPD of less than 5 000/cm.

SJ/T 11490-2015 Referenced Document

• GB/T 8760-2006 Gallium arsenide single crystal-determination of dislocation density

SJ/T 11490-2015 history

• 2015 SJ/T 11490-2015 Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers