GB/T 32282-2015
Measurement of Dislocation Density in Gallium Nitride Single Crystal by Cathodoluminescence Microscopy (English Version)

Standard No.

GB/T 32282-2015

Language

Chinese, Available in English version

Release Date

2016

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 32282-2015

GB/T 32282-2015 Referenced Document

• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
• GB/T 27788 Microbeam analysis—Scanning electron microscopy—Guidelines for calibrating image magnification*， 2020-06-02 Update

GB/T 32282-2015 history

• 2016 GB/T 32282-2015 Measurement of Dislocation Density in Gallium Nitride Single Crystal by Cathodoluminescence Microscopy