This standard specifies the determination of boron content in high-purity ferrosilicon by inductively coupled plasma atomic emission spectrometry (ICP-AES). This standard is applicable to the determination of boron content in high-purity ferrosilicon. Measuring range (mass fraction): 0.001% ~ 0.010%.
YB/T 4462-2015 history
2015YB/T 4462-2015 High purity ferrosilicon.Determination of boron content.Inductively coupled plasma atomic emission spectrometric method