This standard specifies methods for testing the surface roughness of silicon carbide single crystal polished wafers, including surface profilometry and atomic force microscopy. This standard is applicable to the test of surface roughness of silicon carbide single crystal polished wafers. Among them, the atomic force microscopy method is only applicable to silicon carbide single crystal polished wafers that have been chemically mechanically polished or optically polished and have surface roughness fluctuations in the range of a few tenths of a nanometer to a few microns.
SJ/T 11503-2015 history
2015SJ/T 11503-2015 Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers