This standard specifies the testing methods for the conductivity type, resistivity, mobility, and carrier concentration of silicon carbide crystal materials. This standard is applicable to the electrical performance testing of silicon carbide single crystals with resistivity below 1×10 Ω·cm and crystal forms 6H and 4H in the temperature range of (-263.15~426.85)℃.
SJ/T 11499-2015 history
2015SJ/T 11499-2015 Test method for measuring electrical properties of monocrystalline silicon carbide