GB/T 11068-1989
Gallium arsenide epitaxial layer--Determination of carrier concentration--Voltage-capacitance method (English Version)

Standard No.

GB/T 11068-1989

Language

Chinese, Available in English version

Release Date

1989

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2006-11

Replace By

GB/T 11068-2006

Latest

GB/T 11068-2006

Scope

This standard specifies the measurement method of gallium arsenide epitaxial layer carrier concentration capacitance-voltage method. This standard is applicable to the measurement of carrier concentration in gallium arsenide epitaxial layer and bulk material. Measuring range: 1×10¹⁴～5×10¹⁷cm^-3.

GB/T 11068-1989 history

• 2006 GB/T 11068-2006 Gallium arsenide epitaxial layer.Determination of carrier concentration voltage-capacitance method
• 1989 GB/T 11068-1989 Gallium arsenide epitaxial layer--Determination of carrier concentration--Voltage-capacitance method