General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 31225-2014
Scope
This standard provides a method for measuring the thickness of a thin silicon dioxide layer on a silicon surface using a spectral ellipsometer with continuously variable wavelength and variable angle. This standard is suitable for testing the thickness of silicon dioxide thin layer with uniform thickness, isotropy, 10nm~1000nm thick on the silicon substrate. Other single-layer dielectric film samples on the substrate that are opaque at the test wavelength can be measured. Refer to this method.
GB/T 31225-2014 Referenced Document
JJF 1059.1-2012 Evaluation and Expression of Uncertainty in Measurement
GB/T 31225-2014 history
2014GB/T 31225-2014 Test method for the thickness of silicon oxide on Si substrate by ellipsometer