GB/T 30867-2014
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers (English Version)

Standard No.

GB/T 30867-2014

Language

Chinese, Available in English version

Release Date

2014

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 30867-2014

Scope

This standard specifies the test methods for silicon carbide single wafer thickness and total thickness variation (TTV), including contact and non-contact methods. This standard applies to silicon carbide single wafers with a diameter of not less than 30 mm and a thickness of 0.13 mm to 1 mm.

GB/T 30867-2014 Referenced Document

• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 25915.1-2010 Cleanrooms and associated controlled environments.Part 1:Classification of air cleanliness

GB/T 30867-2014 history

• 2014 GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers