GB/T 30857-2014
Standard test method for thickness and thickness variation on sapphire substrates (English Version)

Standard No.

GB/T 30857-2014

Language

Chinese, Available in English version

Release Date

2014

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 30857-2014

Scope

This standard specifies the test method for whether the thickness and thickness variation of sapphire single crystal cutting, grinding and polishing wafers (referred to as substrate wafers) for the preparation of gallium nitride thin film epitaxial wafers and other uses meet the standard limit requirements. This standard applies to the testing of the thickness and thickness variation of sapphire substrates.

GB/T 30857-2014 Referenced Document

• GB/T 14264 Semiconductor materials-Terms and definitions

GB/T 30857-2014 history

• 2014 GB/T 30857-2014 Standard test method for thickness and thickness variation on sapphire substrates