GB/T 29852-2013 Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry (English Version)
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 29852-2013
Scope
This standard specifies the method for determining the content of phosphorus, arsenic and antimony in silicon materials for photovoltaic cells by secondary ion mass spectrometry (SIMS). This standard applies to the quantitative analysis of the content of donor impurities phosphorus, arsenic and antimony in silicon materials for photovoltaic cells, where the concentrations of phosphorus, arsenic and antimony are all greater than 1×1014atoms/cm3.
GB/T 29852-2013 history
2013GB/T 29852-2013 Test method for measuring phosphorus, arsenic and antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry