JC/T 2133-2012
Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method (English Version)

Standard No.
JC/T 2133-2012
Language
Chinese, Available in English version
Release Date
2012
Published By
Professional Standard - Building Materials
Latest
JC/T 2133-2012
Scope
This standard specifies a method for determining the content of impurity elements in silica sol for semiconductor polishing fluids using inductively coupled plasma atomic emission spectroscopy (ICP-AES). This standard applies to various silica sol used in polishing fluids in semiconductor chemical mechanical polishing (CMP). Impurity elements include: aluminum, barium, calcium, chromium, copper, iron, potassium, magnesium, manganese, sodium, nickel, titanium, zinc, zirconium and other 14 elements.

JC/T 2133-2012 Referenced Document

  • GB/T 602 Chemical reagent--Preparations of standard solutions for impurity
  • GB/T 6682 Water for analytical laboratory use.Specification and test methods

JC/T 2133-2012 history

  • 2012 JC/T 2133-2012 Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method
Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method



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