JC/T 2133-2012 Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method (English Version)
This standard specifies a method for determining the content of impurity elements in silica sol for semiconductor polishing fluids using inductively coupled plasma atomic emission spectroscopy (ICP-AES). This standard applies to various silica sol used in polishing fluids in semiconductor chemical mechanical polishing (CMP). Impurity elements include: aluminum, barium, calcium, chromium, copper, iron, potassium, magnesium, manganese, sodium, nickel, titanium, zinc, zirconium and other 14 elements.
JC/T 2133-2012 Referenced Document
GB/T 602 Chemical reagent--Preparations of standard solutions for impurity
GB/T 6682 Water for analytical laboratory use.Specification and test methods
JC/T 2133-2012 history
2012JC/T 2133-2012 Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method