GB/T 29057-2012
Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy (English Version)
- Standard No.
- GB/T 29057-2012
- Language
- Chinese, Available in English version
- Release Date
- 2012
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2024-03
- Replace By
- GB/T 29057-2023
- Latest
- GB/T 29057-2023
- Scope
- 2.1 This standard includes procedures for sampling polycrystalline silicon rods, melting and drawing the sample area into single crystals, and analyzing the drawn single crystal silicon rods by spectroscopic analysis to determine trace impurities in polycrystalline silicon. These trace impurities include donor impurities (usually phosphorus or arsenic, or both), acceptor impurities (usually boron or aluminum, or both), and carbon impurities. 2.2 The measurement range of impurity concentration applicable in this standard: donor and acceptor impurities are (0.002~100) ppba (one billionth atomic ratio), carbon impurities are (0.02~15) ppma (one millionth atomic ratio ). These impurities in the samples are analyzed by low temperature infrared spectroscopy or photoluminescence spectroscopy. 2.3 This standard is only applicable to the evaluation of polysilicon rods deposited and grown on silicon cores.
GB/T 29057-2012 history
- 2023 GB/T 29057-2023 Practice for evaluating polycrystalline silicon rods by zone fusion pulling and spectroscopic analysis
- 2012 GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
