BS EN 60749-23:2004+A1:2011
Semiconductor devices. Mechanical and climatic test methods. High temperature operating life
- Standard No.
- BS EN 60749-23:2004+A1:2011
- Release Date
- 2004
- Published By
- British Standards Institution (BSI)
- Latest
- BS EN 60749-23:2004+A1:2011
- Replace
- 02/206196 DC-2002 BS EN 60749-23:2004
- Scope
- This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.
BS EN 60749-23:2004+A1:2011 Referenced Document
- IEC 60747 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)*， 2019-11-13 Update
BS EN 60749-23:2004+A1:2011 history
- 2004 BS EN 60749-23:2004+A1:2011 Semiconductor devices. Mechanical and climatic test methods. High temperature operating life
- 2004 BS EN 60749-23:2004 Semiconductor devices - Mechanical and climatic test methods - High temperature operating life
