EN 15991:2011
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

Standard No.
EN 15991:2011
Release Date
2011
Published By
European Committee for Standardization (CEN)
Status
Replace By
EN 15991:2015
Latest
EN 15991:2015
Scope
This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight,This test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1000 mg/kg, after evaluation also from 0,001 mg/kg to about 5000 mg/kg. NOTE 1 Generally for optical emission spectrometry using inductively coupled plasma (ICP OES) and electrothermal vaporisation (ETV) there is a linear working range of up to four orders of magnitude.This range can be expanded for the respective elements by variation of the weight or by choosing lines with different sensitivity. After adequate verification, the standard is also applicable to further metallic elements (excepting Rb and Cs) and some non-metallic contaminations (like P and S) and other allied non-metallic powdered or granular materials like carbides, nitrides, graphite, soot, coke, coal, and some other oxidic materials. NOTE 2 There is positive experience with materials like for example graphite, B4C, Si3N4, BN and several metal oxides as well as with the determination of P and S in some of these materials.

EN 15991:2011 history

  • 2015 EN 15991:2015 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
  • 2011 EN 15991:2011 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)



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