IEC 60749-19:2010 PDF

Scope: This part of IEC 60749 determines (see note) the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method, the term “semiconductor die” should be taken to include passive elements). This test method is generally only applicable to cavity packages or as a process monitor. It is not applicable for die areas greater than 10 mm2. It is also not applicable to flip chip technology or to flexible substrates. NOTE 1 This determination is based on a measure of the force applied to the die or to the element, and, if a failure occurs, the type of failure resulting from the application of force and the visual appearance of the residual die attach medium and the header/substrate metallization. NOTE 2 In cavity packages, die shear strength is measured in order to assure the strength of the die attachment within the cavity. In non-cavity packages, such as plastic encapsulated packages, die bonding is used to prevent die movement until the resin mould is completely cured. Normally, specification of the die shear strength and the minimum adhesion area of die bond after moulding are unnecessary, except in the following circumstances: – when the die needs to be electrically connected to die pad; – when heat from the die needs to be diffused through the die bond.

IEC 60749-19:2010 history

2010 IEC 60749-19:2003/AMD1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength test
2010 IEC 60749-19:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength test
2003 IEC 60749-19:2003 Dispositifs à semiconducteurs Méthodes d?essais mécaniques et climatiques Partie 19: Résistance de la pastille au cisaillement (Edition 1.0)