JIS K 0148:2005
Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

Standard No.

JIS K 0148:2005

Release Date

2005

Published By

Japanese Industrial Standards Committee (JISC)

Status

Be replaced

Replace By

JIS K 0148 ERRATUM 1:2005

Latest

JIS K 0148 ERRATUM 1:2005

Scope

This standard specifies a method for quantifying the surface atomic concentration of silicon mirror wafers or epitaxial wafers by total internal reflection X-ray fluorescence spectroscopy (TXRF). This method is applied to the following elemental analyses. —Elements with atomic numbers from 16(S) to 92(U) —Contaminant elements with a surface atomic concentration of 1 × 10 atoms/cm to 1 × 10 atoms/cm —When using the VPD sample pretreatment method, Contaminant elements with atomic concentrations between 5 × 10 atoms/cm and 5 × 10 atoms/cm

JIS K 0148:2005 history

• 2005 JIS K 0148 ERRATUM 1:2005 ERRATUM
• 2005 JIS K 0148:2005 Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy