Adopts ISO 17560:2002 to specify a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon and using stylus profilometry or optical interferometry for depth scale calibration.
AS ISO 17560:2006 history
1970AS ISO 17560:2006 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon