GB/T 24580-2009 (English Version) PDF

Standard No.: GB/T 24580-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 24580-2009

Scope: 1.1 This standard specifies the secondary ion mass spectrometry test method for boron contamination in heavily doped n-type silicon substrates. This standard applies to secondary ion mass spectrometry (SIMS) testing of trace boron contamination (total amount) in heavily doped n-type silicon substrate single crystal materials. 1.2 This standard applies to the detection of boron concentration in silicon materials with doping concentrations of antimony, arsenic, and phosphorus < 0.2% (l×10 atoms/cm). It is especially suitable for p-type impurities that are not intentionally doped with boron, and its The test of silicon material with a concentration of trace level (<5×10 atoms/cm). 1.3 This standard is applicable to the detection of masonry contamination concentration greater than the detection limit of the SIMS instrument (depending on the model of the instrument, the detection limit is about 5×10 atoms /cm～5×10atoms/cm) twice that of silicon material. 1.4 In principle, this standard is applicable to samples with different surface conditions, but the estimated accuracy value in this standard is obtained from the test data of surface polished samples.

GB/T 24580-2009 Referenced Document

ASTM E122 Standard Practice for Calculating Sample Size to Estimate, With a Specified Tolerable Error, the Average for Characteristic of a Lot or Process

2009 GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry