This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
IEC 60749-23:2004 history
2011IEC 60749-23:2004/AMD1:2011 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
2011IEC 60749-23:2011 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
2004IEC 60749-23:2004 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life