1.1 This test method covers the measurement of steady-state primary photocurrent, Ipp, generated in semiconductor devices when these devices are exposd to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10-9 A-s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25% of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 108Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 1010Gy(Si or Ge)/s; however, extra care must be taken. Above 108Gy/s the package response may dominate the device response for technologies such as complementary metal-oxide semiconductor, (CMOS)/silicon-on sapphire (SOS). Additional precautions are also required when measuring photocurrents of 10-9 A-s/Gy(Si or Ge) or lower.
1.2 Setup, calibration, and test circuit evaluation procedures are also included in this test method.
1.3 Because of the variability between device types and in the requirements of different applications, the dose rate range over which any specific test is to be conducted is not given in this test method but must be specified separately.
1.4 The values state in International System of Units (SI) are to be regarded as the standard. No other units of measurement are included in this standard.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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